Symbol VDS VGS IDM TJ TSTG SymbolTypMax 5062 5 73110 R JL3140 W Maximum Junction to Lead CSteady State C W Thermal Characteristics ParameterUnits Maximum Junction to Ambient At 10s R JA C W Maximum Junction to Ambient ASteady State C W 25Gate Source Voltage Drain Source Voltage 30 Continuous Drain Current A MaximumUnitsParameter TA 25 C TA 70 C Absolute Maximum Ratings TA 25 C unless otherwise noted V V 6 9 40Pulsed Drain Current B Power Dissipation A TA 25 C Junction and Storage Temperature Range A PD C 2 1 44 55 to 150 TA 70 C ID 8 AO4805 Dual P Channel Enhancement Mode Field Effect Transistor June 2002 Features VDS V 30V ID 8A RDS ON 18m VGS 20V RDS ON 19m VGS 10V General Description The AO4805 uses advanced trench technology to provide excellent RDS ON and ultra low low gate charge with a 25V gate rating This device is suitable for use as a load switch or in PWM applications G1 S1 G2 S2 D1 D1 D2 D21 2 3 4 8 7 6 5 G1 D1 S1 SOIC 8 G2 D2 S2 Alpha Omega Semiconductor Ltd AO4805 SymbolMinTypMaxUnits BVDSS 30V 1 TJ 55 C 5 IGSS 100nA VGS th 1 7 2 5 3V ID ON 40A 1619 TJ 125 C20 525 1518 m 33 m gFS1621S VSD 0 75 1V IS 2 6A Ciss2076pF Coss503pF Crss302pF Rg2 Qg39nC Qgs8nC Qgd11 4nC tD on 12 7ns tr7ns tD off 25 2ns tf12ns trr32 ns Qrr26nC Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF 8A dI dt 100A s Drain Source Breakdown Voltage On state drain current ID 250 A VGS 0V VGS 4 5V ID 5A VGS 10V VDS 5V VGS 10V ID 8A Reverse Transfer Capacitance Electrical Characteristics TJ 25 C unless otherwise noted STATIC PARAMETERS ParameterConditions IDSS A Gate Threshold VoltageVDS VGS ID 250 A VDS 24V VGS 0V VDS 0V VGS 25V Zero Gate Voltage Drain Current Gate Body leakage current RDS ON Static Drain Source On Resistance Forward Transconductance Diode Forward Voltage m VGS 20V ID 8A IS 1A VGS 0V VDS 5V ID 8A IF 8A dI dt 100A s VGS 0V VDS 15V f 1MHz SWITCHING PARAMETERS Total Gate Charge VGS 10V VDS 15V ID 8AGate Source Charge Gate Drain Charge Turn On Rise Time Turn Off DelayTime VGS 10V VDS 15V RL 1 8 RGEN 3 Gate resistanceVGS 0V VDS 0V f 1MHz Turn Off Fall Time Maximum Body Diode Continuous Current Input Capacitance Output Capacitance Turn On DelayTime DYNAMIC PARAMETERS A The value of R JA is measured with the device mounted on 1in 2 FR 4 board with 2oz Copper in a still air environment with T A 25 C The value in any a given application depends on the user s specific board design The current rating is based on the t 10s thermal resistance rating B Repetitive rating pulse width limited by junction temperature C The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient D The static characteristics in Figures 1 to 6 12 14 are obtained using 80 s pulses duty cycle 0 5 max E These tests are performed with the device mounted on 1 in 2 FR 4 board with 2oz Copper in a still air environment with T A 25 C The SOA curve provides a single pulse rating Alpha Omega Semiconductor Ltd AO4805 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 10 20 30 40 50 012345 VDS Volts Fig 1 On Region Characteristics ID A VGS 4V 4 5V 5V 5 5V 10V 0 5 10 15 20 25 00 511 522 533 544 55 VGS Volts Figure 2 Transfer Characteristics ID A 0 5 10 15 20 25 30 0510152025 ID A Figure 3 On Resistance vs Drain Current and Gate Voltage RDS ON m 1 0E 06 1 0E 05 1 0E 04 1 0E 03 1 0E 02 1 0E 01 1 0E 00 1 0E 01 0 00 20 40 60 81 01 2 VSD Volts Figure 6 Body Diode Characteristics IS A 25 C 125 C 0 8 0 9 1 1 1 1 2 1 3 1 4 0255075100125150175 Temperature C Figure 4 On Resistance vs Junction Temperature Normalized On Resistance VGS 10V VGS 4 5V 0 10 20 30 40 50 60 246810 VGS Volts Figure 5 On Resistance vs Gate Source Voltage RDS ON m 25 C 125 C VDS 5V VGS 6V VGS 10V ID 8A 25 C 125 C ID 8A 6V 8V Alpha and Omega Semiconductor Ltd AO4805 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 2 4 6 8 10 0510152025303540 Qg nC Figure 7 Gate Charge Characteristics VGS Volts 0 500 1000 1500 2000 2500 3000 051015202530 VDS Volts Figure 8 Capacitance Characteristics Capacitance pF Ciss 0 10 20 30 40 0 010 11101001000 Pulse Width s Figure 10 Single Pulse Power Rating Junction to Ambient Note E Power W 0 01 0 1 1 10 0 000010 00010 0010 010 11101001000 Pulse Width s Figure 11 Normalized Maximum Transient Thermal Impedance Z JA Normalized Transient Thermal Resistance Coss Crss 0 1 1 0 10 0 100 0 0 1110100 VDS Volts ID Amps Figure 9 Maximum Forward Biased Safe Operating Area Note E 100 s 10ms 1ms 0 1s 1s 10s DC RDS ON limited TJ Max 150 C TA 25 C VDS 15V ID 8A Single Pulse D Ton T TJ PK TA PDM Z JA R JA R JA 62 5 C W Ton T PD In descending order D 0 5 0 3 0 1 0 05 0 02 0 01 single pulse TJ Max 150 C TA 25 C10 s Alpha Omega Semiconductor Ltd E h L aaa b E1 c e D A A2 A1 SYMBOLS 0 050 BSC 0 50 1 27 8 0 10 0 10 5 00 6 20 4 00 0 51 0 25 1 55 5 80 0 0 25 0 40 1 27 BSC 0 19 3 80 4 80 1 45 0 33 0 00 1 50 1 45 0 228 0 010 0 016 0 0 057 0 007 0 013 0 150 0 189 0 000 0 059 0 057 0 244 8 0 020 0 050 0 004 0 010 0 157 0 197 0 061 0 020 0 004 DIMENSIONS IN INCHESDIMENSIONS IN MILLIMETERS MAXMINNOMMINNOMMAX SO 8 Package Data NOTE 1 LEAD FINISH 150 MICROINCHES 3 8 um MIN THICKNESS OF Tin Lead SOLDER PLATED ON LEAD 2 TOLERANCE 0 10 mm 4 mil UNLESS OTHERWISE SPECIFIED 3 COPLANARITY 0 10 mm 4 DIMENSION L IS MEASURED IN GAGE PLANE RECOMMENDED LAND PATTERNPACKAGE MARKING DESCRIPTION NOTE LOGO AOS LOGO 4805 PART NUMBER CODE F FAB
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